Nanotechnology

Electrically managed exchange-bias impact found in magnetic van der Waals heterostructures

Electrically managed exchange-bias impact found in magnetic van der Waals heterostructures
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Electrically controlled exchange-bias effect discovered in magnetic van der Waals heterostructures
(a) Schematic of the strong proton subject impact transistor. (b, c) Optical and atomic drive microscope pictures of heterostructure gadget. (d, e) Gate-dependent trade bias results at T = 30 and 40 Okay, respectively. (f, g) Amplitudes of the trade bias results beneath numerous gating voltages at T = 30 and 40 Okay, respectively. Credit score: Zheng Guolin

Van der Waals (vdW) ferromagnets are the constructing blocks of vdW heterostructure gadgets similar to vdW ferromagnetic (FM)-antiferromagnetic (AFM) heterostructures and vdW FM-ferroelectric heterostructures. These vdW heterostructure gadgets have attracted plenty of consideration on account of their promising purposes in fashionable spintronics.

Nonetheless, the coupling of a vdW is weak because of the massive vdW hole, which impedes the event of this burgeoning space. Understanding of the best way to electrically tune the interface coupling in vdW heterostructure gadget stays elusive.

Not too long ago, professor Zheng Guolin from the Excessive Magnetic subject laboratory on the Hefei Institutes of Bodily Science on the Chinese language Academy of Sciences (CAS), collaborating with professor Lan Wang from Royal Melbourne Institute of Know-how College, experimentally studied the interface coupling in FePS3-Fe5GeTe2 van der Waals heterostructures through proton intercalations.

That is the primary time scientists found that the interface coupling induced trade bias impact may be electrically managed through gate-induced proton intercalations, which give a promising method to manipulate the interface coupling in lots of extra vdW heterostructures.

The outcomes had been just lately printed in Nano Letters.

On this analysis, the staff fabricated FePS3-Fe5GeTe2 vdW heterostructure gadgets (with the thickness of FM layer Fe5GeTe2 between 12-18 nm) and confirmed that the weak trade bias results beneath 20 Okay developed because of the interface .

Nonetheless, once they put the heterostructure gadgets onto the strong proton conductors, the blocking temperature (the place the trade bias impact disappeared) was boosted as much as 60 Okay. Furthermore, the noticed trade bias impact may be electrically switched “ON” and “OFF” because of the intercalations or de-intercalations of the protons beneath a gate voltage.

Apparently, the magnetic properties of the highest Fe3GeTe2 layer—together with coercivity, anomalous Corridor resistivity and Curie temperature—did not change throughout the entire gating course of, revealing that the proton intercalation has a really restricted impression on FM layer.

Additional primarily based on density practical principle demonstrated that the proton intercalations primarily affected the magnetic coupling on the interface in addition to the magnetic configurations in AFM layer, resulting in a gate-tunable trade bias impact.


Manipulating interlayer magnetic coupling in van der Waals heterostructures


Extra data:
Sultan Albarakati et al, Electrical Management of Alternate Bias Impact in FePS3–Fe5GeTe2 van der Waals Heterostructures, Nano Letters (2022). DOI: 10.1021/acs.nanolett.2c01370

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Electrically managed exchange-bias impact found in magnetic van der Waals heterostructures (2022, September 15)
retrieved 15 September 2022
from https://phys.org/information/2022-09-electrically-exchange-bias-effect-magnetic-van.html

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